Hitachi HZU5.6Z
Silicon Epitaxial Planar Zener Diode for Surge Absorb
| Part No. | HZU5.6Z |
|---|---|
| Datasheet | HZU5.6Z Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| Buy | Stock & Price |
FEATURES
● Low capacitance (C=8.5pF max) and can protect ESD of signal line.● Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU5.6Z Laser Mark 56Z Package Code URP Outline Cathode mark Mark 1 56Z 2 1. Cathode 2. Anode HZU5.6Z
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd Min 5.31 — — — 8 Typ — — 8.0 — Max 5.92 0.5 8.5 80 Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 2.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Failure criterion ; IR > 0.5 µA at VR = 2.5V. 2 HZU5.6Z Main Characteristic 10 -2 250 Polyimide board 20hx15wx0.8t Power Dissipation Pd (mW) (A) 10 -3 200 3.0 1.5 Iz 150...
