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HZU5.6Z - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • Low capacitance (C=8.5pF max) and can protect ESD of signal line.
  • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU5.6Z Laser Mark 56Z Package Code URP Outline Cathode mark Mark 1 56Z 2 1. Cathode 2. Anode HZU5.6Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
  • 1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Charact.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb
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HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HZU5.6Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-795(Z) Rev 0 May. 1999 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU5.6Z Laser Mark 56Z Package Code URP Outline Cathode mark Mark 1 56Z 2 1. Cathode 2. Anode HZU5.6Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 5.31 — — — 8 Typ — — 8.0 —  Max 5.92 0.5 8.