Datasheet4U.com

J117 Datasheet PDF

Hitachi J117

Silicon P-Channel MOS FET

Part No. J117
Datasheet J117 Download
Manufacturer
Hitachi
Description Silicon P-Channel MOS FET
Buy Stock & Price
J117 datasheet page 1 preview

FEATURES

●
●
●
● High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 –4 –2 40 150 –55 to +150 Unit V V A A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS –400 — — –2.0 — Typ — — — — 5 Max — ±1 –1 –5.0 7 Unit V µA mA V Test conditions I D = –10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = –320 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –1 A, VGS = –15 V*1 S pF pF pF ns ns ns ns V ns I F = –1 A, VGS =...
J117 page 2 preview J117 page 3 preview