3P
ADE-208-454 B 3rd. Edition
D
G
1. Gate
1 2. Drain
2 3
(Flange) 3. Source
S
2SK2728
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I.
K2717 - Silicon N Channel MOS Type Field Effect Transistor(Toshiba)
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2SK2728
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • Avalanche ratings
Outline
TO–3P
ADE-208-454 B 3rd. Edition
D
G
1. Gate
1 2. Drain
2 3
(Flange) 3. Source
S
2SK2728
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I *1
D(pulse)
I DR I AP * 3 EAR* 3 Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.