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K2925 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS =0.060 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline ADE-208-549C (Z) 4th. Edition Jun 1998 DPAK.
  • 2 44 D G S 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel di.

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2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-549C (Z) 4th. Edition Jun 1998 DPAK–2 44 D G S 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.