K2925
K2925 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance RDS =0.060 Ω typ.
- High speed switching
- 4V gate drive device can be driven from 5V source
Outline
ADE-208-549C (Z) 4th. Edition Jun 1998
DPAK- 2
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2925(L),2SK2925(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω
Ratings 60 ±20 10 40 10 10 8.5 20 150
- 55 to +150
Unit V V A A A A m J W °C °C
2SK2925(L),2SK2925(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown...
