K3380 Overview
2SK3380 Silicon N Channel MOS FET High Speed Switching.
K3380 Key Features
- Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
- 4 V gate drive device
Datasheet Details
| Part number | K3380 |
|---|---|
| Datasheet | K3380-Hitachi.pdf |
| File Size | 23.75 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N Channel MOS FET |
|
|