Hitachi MBM200GS12AW
IGBT POWER MODULE
| Part No. | MBM200GS12AW |
|---|---|
| Datasheet | MBM200GS12AW Download |
| Manufacturer |  Hitachi |
| Description | IGBT POWER MODULE |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM200GS12AW 1,200 ±20 200 400 200 (1) 400 1,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.96(20) (3) DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 19,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W S...
