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IGBT MODU ODULE
MBM200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 80 16
E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
3-M5 2- φ5.6
16
16
G2
4-Fast-on Terminal #110
C1
E2
C2E1
E1 G1
23
23 39.5 φ0.8
7 12 30
C2E1 G2 E2 E2 C1 E1 G1
Weight: 265 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m (kgf.cm)
MBM200GS12AW
1,200 ±20 200 400 200 (1) 400 1,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) (2) 1.
MBM200GS12AW Datasheet
