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IGBT MODU ODULE
MBM200JS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
4- φ 6.5
20
108 93 18
20
4-Fast-on Terminal #110
3-M6
C2E1
G2 E2
E1
E2
C1
G1
25
25 46
7 12 36
PDE-M200JS12AW-0
φ 0.8
29 6.5
C2E1
G2 E2 E2 C1 E1 G1
Weight: 470 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m (kgf.cm)
MBM200JS12AW
1,200 ±20 200 400 200 (1) 400 1,470 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) (2) 2.
MBM200JS12AW Datasheet
