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MBM300GS12AW - IGBT Module Silicon N-Channel IGBT

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IGBT MODU ODULE MBM300GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). C2E1 G2 E2 E2 C1 E1 G1 Weight: 540(g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM300GS12AW 1,200 ±20 300 600 300 600 1,700 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) 2.