Hitachi MBM300GS12AW
IGBT Module Silicon N-Channel IGBT
| Part No. | MBM300GS12AW |
|---|---|
| Datasheet | MBM300GS12AW Download |
| Manufacturer |  Hitachi |
| Description | IGBT Module Silicon N-Channel IGBT |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM300GS12AW 1,200 ±20 300 600 300 600 1,700 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) 2.94(30) DC 1ms DC 1ms (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 90Arms max. (2)(3)Recommended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=300A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =300mA Input Capacitance Cies pF 28,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=2.0W Swi...
