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PF0031 - MOS FET Power Amplifier Module

Key Features

  • High stability: Load VSWR ≈ 20:1.
  • Low power control current: 400 µA.
  • Thin package: 5 mm t Pin Arrangement.
  • RF-B2 w w . D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 . c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w . D a S a t e e h U 4 t m o . c PF0031 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 10 µF (Al.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application PF0031: For NMT900 890 to 925 MHz Features • High stability: Load VSWR ≈ 20:1 • Low power control current: 400 µA • Thin package: 5 mm t Pin Arrangement • RF-B2 w w .D w 5 t a 1 S a 2 e h 3 t e 5 4 U 4 .c m o 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND w w w .D a S a t e e h U 4 t m o .c PF0031 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.