Hitachi PF01412A
MOS FET Power Amplifier
FEATURES
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● High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
● RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 –30 to +100 –30 to +100 6 Unit V A V mW °C °C W PF01412AELECTRICAL CHARACTERISTICS
(Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 890 0.5 — 40 — — — 3.8 Typ — — — 45 –45 –45 1.5 4.5 Max 915 3.0 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — W Pin = 1 mW, VDD = 5.5 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 5.0 V, VAPC = 3.0 V,...