Hitachi PF0210
MOS FET Power Amplifier
| Part No. | PF0210 |
|---|---|
| Datasheet | PF0210 Download |
| Manufacturer |  Hitachi |
| Description | MOS FET Power Amplifier |
| Buy | Stock & Price |
FEATURES
● High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK● Low input power: 0 dBm ave. Typ for π /4-DQPSK
● Simple bias circuit
● High speed switching: 8 µs Typ Pin Arrangement
● RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line)
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 17 4 5.5 20 –30 to +100 –40 to +110 Unit V A V mW °C °C 2 PF0210ELECTRICAL CHARACTERISTICS
(Tc = 25°C) Analog Transmission Item Frequency Drain cutoff current Total efficiency(1) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Isolation Stability Symbol f I DS ηT(1) 2nd H.D.
