Hitachi PF0414B
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
| Part No. | PF0414B |
|---|---|
| Datasheet | PF0414B Download |
| Manufacturer |  Hitachi |
| Description | MOS FET Power Amplifier Module for DCS 1800 Handy Phone |
| Buy | Stock & Price |
FEATURES
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● 3stage amplifier : 0 dBm input Lead less thin & small package : 2 mm Max & 0.2cc High efficiency : 40% Typ at 32.5 dBm Wide gain control range : 70 dB Typ Low voltage operation : 3.5 V Pin Arrangement
● RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 2 4 10 –30 to +100 –30 to +100 3 Unit V A V mW °C °C W PF0414BELECTRICAL CHARACTERISTICS
(Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 1710 0.5 — 35 — — — 32.5 Typ — — — 40 –45 –45 1.5 33.0 Max 1785 2.2 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — dBm Pin = 0 dBm, VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 0...
