Hitachi PF08107B
MOS FET Power Amplifier
| Part No. | PF08107B |
|---|---|
| Datasheet | PF08107B Download |
| Manufacturer |  Hitachi |
| Description | MOS FET Power Amplifier |
| Buy | Stock & Price |
FEATURES
● 2 in / 2 out dual band amplifier● Simple external circuit including output matching circuit
● One power control pin with one band switch
● High gain 3stage amplifier : 0 dBm input Typ
● Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
● High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement
● RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08107B
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Symbol Rating Unit Supply voltage Vdd 8 V Supply current Vctl voltage Idd GSM Idd DCS Vctl 3.5 2 4 A A V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) −30 to +100 °C Storage temperature Tstg −30 to +100 °C Output power Pout GSM 5 W Pout DCS 3 W Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz).ELECTRICAL CHARACTERISTICS
for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Tes...
