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PF08109B - MOS FET Power Amplifier Module

Datasheet Summary

Features

  • 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current Symbol Vdd Idd GSM Idd DCS Vtxlo voltage Vapc voltage Input power Operating case temperature.

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Datasheet Details

Part number PF08109B
Manufacturer Hitachi
File Size 30.77 KB
Description MOS FET Power Amplifier Module
Datasheet download datasheet PF08109B Datasheet
Additional preview pages of the PF08109B datasheet.

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Full PDF Text Transcription

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PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application • Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz) • For 3.5 V nominal battery use Features • • • • • 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.
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