• Part: PF08109B
  • Description: MOS FET Power Amplifier Module
  • Manufacturer: Hitachi Semiconductor
  • Size: 30.77 KB
Download PF08109B Datasheet PDF
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Datasheet Summary

MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application - Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz) - For 3.5 V nominal battery use Features - - - - - 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for...