Hitachi PM45502C
Silicon N-Channel Power MOS FET Module
| Part No. | PM45502C |
|---|---|
| Datasheet | PM45502C Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel Power MOS FET Module |
| Buy | Stock & Price |
FEATURES
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● Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. DataSheet 4 U .com PM45502C Outline LF-C D2 S2 D1 S1 G1 S1 S2 No S1 D1 S2 D2 G1 S1 G2 S2 G2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal Rg G2 S2 S2 D1 Rg G1 S1 S1 Equivalent Circuit D2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 Signal terminals
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes 1. Value at Tc = 25°C 2. Base to terminals AC minute Symbol VDSS VGSS ID ID(peak) IDR IDR(peak) Pc...
