Hitachi PM4575J
Silicon N-Channel Power MOS FET Module
FEATURES
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● Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. DataSheet 4 U .com PM4575J Outline LF-J D1 S2 S1/D2 G2 S2 S1 G1 Equivalent Circuit D1 G1 S1 S1/D2 G2 S2 No S1 D1 S2 D2 G1 S1 G2 S2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal S2 Signal terminals
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1. Value at Ta = 25°C 2. Base to terminals AC minute Symbol V(BR)DSS V(BR)GSS ID I D(peak) I DR I DR(peak) Pch...