1SS108
1SS108 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Detection efficiency is very good.
- Small temperature coefficient.
- High reliability with glass seal.
Ordering Information
Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35
Outline
1 2nd band Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η
- Min 3.0
- - 70 70 Typ
- -
- -
- Max
- 100 3.0
- - Unit m A µA p F % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k Ω, CL = 20p F
- C = 200p F, Both forward and reverse direction 1 pulse.
Note: Failure criterion; I R ≥ 200µA at VR = 10V
- 1
Forward current I F (A)
- 2
- 3
- 4
- 5
- 6
1.2 1.6 0.4 0.8 Forward voltage VF...
