Download 1SS120 Datasheet PDF
Hitachi Semiconductor
1SS120
1SS120 is Silicon Diode manufactured by Hitachi Semiconductor.
Features - Low capacitance. (C = 3.0p F max) - Short reverse recovery time. (trr = 3.5ns max) - Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS120 Cathode band Light Blue Mark 1 Package Code MHD Outline 1 Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM - IO Pd Tj Tstg Value 70 60 450 1 150 250 175 - 65 to +175 Unit V V m A A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr- Min - - - - Typ - - - - Max 0.8 0.1 3.0 3.5 Unit V µA p F ns Test Condition I F = 10m A VR = 60V VR = 1V, f = 1MHz I F = 10m A, VR = 6V, RL = 50Ω Note: Reverse recovery time test circuit DC Supply 0.1µF 3kΩ Sampling Rin = 50Ω Oscilloscope Ro = 50Ω Pulse Generator Trigger - 1 Forward current I F (A) - 3 - 4 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 125 °C Ta = 75°C Ta = 25°C Ta = - 25° C -...