2SA1121 Datasheet | Hitachi Semiconductor

Silicon PNP Epitaxial Application - Low frequency amplifier - plementary pair with 2SC2618 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings - 35 - 35 - 4 - 500 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min - 35 - 35 - 4 - - 60 10 - D SD 160 to 320 Typ - - - - - 0.2 - - - 0.64 Max - - - - 0.5 - 0.6 320 - - V Unit V V V µA V Test conditions I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 20 V, IE = 0 I C = - 150 m A, IB = - 15 m A VCE = - 3 V, IC = - 10 m A VCE = - 3 V, IC...