2SA1390 Datasheet | Hitachi Semiconductor

Silicon PNP Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings - 35 - 35 - 4 - 500 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min - 35 - 35 - 4 - - 60 10 - Typ - - - - - 0.2 - - - 0.64 Max - - - - 0.5 - 0.6 320 - - V Unit V V V µA V Test conditions I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 20 V, IE = 0 I C = - 150 m A, IB = - 15 m A- 2 VCE = - 3 V, IC = - 10 m A VCE = - 3 V, IC...