2SA1485 Datasheet | Hitachi Semiconductor

Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings - 200 - 200 - 5 - 100 200 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min - 200 - 200 - 5 - 100 - - Typ - - - - - - - Max - - - - 500 250 - 0.5 - 1.0 V V Unit V V V µA Test conditions I C = - 10 µA, IE = 0 I C = - 0.5 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCE = - 200 V, RBE = ∞ VCE = - 12 V, IC = - 2 m A- 1 I C = - 30 m A, IB = - 3 m A- 1 VCE = - 12 V, IC = - 2 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: 1. Pulse test V(BR)EBO I CEO h FE VCE(sat) VBE Maximum Collector Dissipation Curve Collector power dissipation PC (m W) 300 Collector current IC (m A) Typical Output Characteristics...