2SA1960 Datasheet | Hitachi Semiconductor

Features - High voltage large current operation. VCEO = - 80 V, IC = - 300 m A - High f T . f T = 1.3 GHz - Small output capacitance. Cob = 2.9 p F Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings - 80 - 80 - 3 - 300 625 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector to base cutoff current Emitter to base cutoff current DC current transfer ratio Gain bandwidth product Emitter input capacitance Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE f T Cib Cob Min - 80 - 80 - - 20 1.1 - - Typ - - - - 60 1.3 14.5 2.9 Max - - - 1.0 - 10 - - 18 4.0 GHz p F p F Unit V V µA µA Test conditions I C = - 100 µA IE = 0 I C = - 1 m A RBE = ∞ VCB = - 60 V IE = 0 VEB = - 3 V IC = 0 VCE = - 5 V, IC = - 50 m A Pulse test VCE = - 10 V I C = - 50 m A VEB = 0, IC = 0 f = 1 MHz VCB = - 10 V, IE = 0 f = 1 MHz DC Current Transfer Ratio vs. Collector Current 100 DS Current Tranfer Ratio h FE 50 V CE = - 5V 20 10 5 2 1 50 100 150 200 -...