2SB1026
2SB1026 is Silicon PNP Transistor manufactured by Hitachi Semiconductor.
Silicon PNP Epitaxial
Application
- Low frequency power amplifier
- plementary pair with 2SD1419
Outline
UPAK
1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC
- Tj Tstg
2 1
Ratings
- 120
- 100
- 5
- 1
- 2 1 150
- 55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Mark h FE1 VCE(sat) VBE f T Cob
Min
- 120
- 100
- 5
- 60 30
- -
- -
Typ
- -
- -
- -
- - 140 20
Max
- -
- - 10...
