2SB831 Datasheet | Hitachi Semiconductor

Silicon PNP Epitaxial Application - Low frequency amplifier - plementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings - 25 - 20 - 5 - 0.7 - 1 150 150 - 55 to +150 Unit V V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE- Min - 25 - 20 - 5 - 85 - - Typ - - - - - - - Max - - - - 1.0 240 - 0.5 - 1.0 Unit V V V µA Test conditions I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 20 V, IE = 0 VCE...