2SB859
2SB859 is Silicon PNP Transistor manufactured by Hitachi Semiconductor.
Silicon PNP Triple Diffused
Application
Low frequency power amplifier plementary pair with 2SD1135
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC
- Tj Tstg
Rating
- 100
- 80
- 5
- 4
- 8 40 150
- 45 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
- 80
- 5
- 1
Typ
- -
- -
- -
- 20 75
Max
- -
- 0.1 200
- - 1.5
- 2
- -
Unit V V m A
Test conditions I C =
- 50 m A, RBE = ∞ I E =
- 10 µA, IC = 0 VCB...
