2SC1213A Datasheet | Hitachi Semiconductor

2SC1213A(K) Silicon NPN Epitaxial Application - Low frequency amplifier - Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213A (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 400 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 4 - 1 Typ - - - - - - 0.64 Max - - - 0.5 320 - - 0.6 1.2 - - - - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1.0 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 m A VCE = 3 V, IC = 500 m A- 2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE- h FE Base to emitter voltage Collector to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob f T t on t off t stg 60 10 V V V p F MHz µS µS µS VCE = 3 V, IC = 10 m A I C = 150 m A, IB = 15 m A- 2 I C = 150 m A, IB = 15 m A- 2 VCB = 10 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 m A VCC = 10.3 V I C = 10 IB1 = - 10 IB2 = 10 m A - - - - - - - 0.12 0.83 7.0 120 0.25 0.85 0.4 VCC = 5 V I C = IB1 = - IB2 = 20 m A Notes: 1. The 2SC1213A(K) is grouped by h FE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to...