2SC2298
2SC2298 is Silicon NPN Epitaxial Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
High gain amplifier
Outline
TO-126 MOD
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol VCBO VCEO VEBO IC IC(peak) PC PC- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Collector to base voltage
Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation w w
.D w
3 t a
S a e h t e
U 4
.c
2 m o
1. Emitter 2. Collector 3. Base 1
Ratings 30 30 10 1.0 1.5 0.8 8 150
- 55 to +150
Unit V V V A A W W °C °C w w w
.D a
S a t e e h
U 4 t m o .c
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 30
- 1
Typ
- -
- -
- -
- Max
- 10
- -
- 1.5 2.0
Unit V µA
Test conditions IC = 1 m A, RBE = ∞ VEB = 10 V, IC = 0 VCE = 3 V, IC = 10 m A VCE = 3 V, IC = 100 m A VCE = 3 V, IC = 400 m A (pulse test)
Collector to emitter breakdown V(BR)CEO voltage Emitter cutoff current DC current transfer ratio IEBO h FE1- h FE2- h FE3- Collector to emitter saturation voltage Base to emitter saturation voltage...
