Download 2SC2471 Datasheet PDF
Hitachi Semiconductor
2SC2471
2SC2471 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial Application - UHF Amplifier - UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 3 50 310 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 3 - - - - 20 1000 - CC - Typ - - - - - - - - 2000 0.9 12 Max - - - 100 100 300 0.95 - - 1.5 20 MHz p F ps Unit V V V n A n A m V V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 24 V, IE = 0 VEB = 2 V, IC = 0 I C = 10 m A, IB = 5 m A VCE = 10 V, IC = 5 m A VCE = 10 V, IC = 5 m A VCE = 10 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 5 m A, f = 31.8 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage Base to emitter voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Base time constant V(BR)EBO I CBO I EBO VCE(sat) VBE h FE f T Cob rbb’ - 2 DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) DC Current Transfer Ratio h FE 400 100 VCE = 10 V 80 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current 2,500 Gain Bandwidth Product f T (MHz) VCE = 10 V 2,000 Collector Output Capacitance Cob (p F) 5 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 2 1.0 0.5 1,500 1,000 0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 1 2 5 10 20 Collector Current IC (m A)...