2SC2611
2SC2611 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Triple Diffused
Application
High voltage amplifier TV VIDEO output
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 1.25 150
- 55 to +150 Unit V V V m A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5
- 30
- 50
- Typ
- -
- -
- - 80
- Max
- -
- 1.0 200 1.5
- 4.0 V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 m A I C = 20 m A, IB = 2 m A VCE = 20 V, IC = 20 m A VCB = 20 V, IE = 0, f = 1 MHz
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO h FE VCE(sat) f T Cob
Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (m A)
Typical Output Characteristics 16 14 12 10 8 0.4 6 4 0.2 2 µA IB = 0
50 100 Ambient Temperature TC (°C)
0.4 0.8 1.2 1.6 2.0 Collector to emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current 100 DC current transfer ratio h FE
Typical Transfer Characteristics 100 Collector Current IC (m A) 50 VCE = 20 V 20 10...
