2SC2620 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application VHF amplifier, Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 - - Typ - - - - - - 0.17 0.72 940 0.9 Max - - - 0.5 0.5 200 - - - - Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 VEB = 2 V, IC = 0 VCE = 6 V, IC = 1 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Grade Mark h FE B QB 60 to 120 C QC 100 to 200 V(BR)EBO I CBO I EBO h FE- - - - - VCE(sat) VBE f T Cob V V MHz p F I C = 20 m A, IB = 4 m A VCE = 6 m A, IC = 1 m A VCE = 6 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC2620 is grouped by h FE as follows. See characteristic curves of 2SC535. Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 150 50 100 150 Ambient Temperature Ta...