2SC2732 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF frequency converter Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 4 - - 30 700 - - Typ - - - - - 60 1000 0.5 7.0 Max - - - 0.5 5 - - 0.8 - MHz p F d B Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 I C = 10 m A, IB = 1 m A VCE = 10 V, IC = 3 m A VCE = 10 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCC = 12 V, IC = 1 m A, f = 900 MHz, f OSC = 930 MHz (0d Bm) , f out = 30 MHz VCC = 12 V, IC = 1 m A, f = 900 MHz, f OSC = 930 MHz (0d Bm) , f out = 30 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain V(BR)EBO I CBO VCE(sat) h FE f T Cob CG Noise figure - 10.0 - d B Note: Marking is “EC”. DC Current Transfer Ratio vs. Collector Current Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 150 DC Current Transfer Ratio h FE 100 VCE = 10 V 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (MHz) VCE = 10 V Collector Output Capacitance Cob (p F) 2,000 1.0 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE =...