2SC2736 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - UHF/VHF frequency converter - Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 - - 30 - 1400 - Typ - - - - - - - 2200 22.5 Max - - - 500 0.7 200 1.0 - - p F MHz d B Unit V V V n A V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IC = 0 I C = 10 m A, IB = 5 m A VCE = 10 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 5 m A VCC = 12 V, IC = 2 m A, f = 200 MHz, f OSC = 230 MHz (0d Bm) VCC = 12 V, IC = 2 m A, f = 900 MHz, f OSC = 930 MHz (0d Bm), f Out = 30 MHz VCC = 12 V, IC = 2 m A, f = 200 MHz, f OSC = 230 MHz (0d Bm) VCC = 12 V, IC = 7 m A, f OSC = 300 MHz VCC = 12 V, IC = 7 m A, f OSC = 930 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain V(BR)EBO I CBO VCE(sat) h FE Cob f T CG1 CG2 - 10 - d B Noise figure - 4.0 - d B Oscillating output voltage VOSC1 VOSC2 - - 300 200 - - m V m V Note: Marking is “TC”. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 100 VCE = 10...