2SC2776 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application - VHF amplifier - Mixer, Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 30 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 - 1 Typ - - - - - 0.8 1.1 320 5.5 17 Max - - - 0.5 200 1.2 - - - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Noise figure Power gain V(BR)EBO I CBO h FE- - - - - - VCE(sat) Cob f T NF PG V p F MHz d B d B I C = 10 m A, IB = 1 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 m A VCE = 6 V, IC = 1 m A, f = 100 MHz, Rg = 50 Ω VCE = 6 V, IC = 1 m A, f = 100 MHz, Rg = 100 Ω, RL = 550 Ω, Unneutralized Note: Grade Mark h FE 1. The 2SC2776 is grouped by h FE as follows. A VA 35 to 70 B VB 60 to 120 C VC 100 to 200 See characteristic curves of 2SC1342. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 50 100 Ambient Temperature Ta...