2SC2856 Datasheet | Hitachi Semiconductor

2SC2855, 2SC2856 Silicon NPN Epitaxial Application - Low frequency low noise amplifier - plementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2855 90 90 5 100 - 100 400 150 - 55 to +150 2SC2856 120 120 5 100 - 100 400 150 - 55 to +150 Unit V V V m A m A m W °C °C 2SC2855, 2SC2856 Electrical Characteristics (Ta = 25°C) 2SC2855 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- 2SC2856 Max Min - - - 0.1 0.1 800 120 120 5 - - 250 Typ - - - - - - Max Unit - - - 0.1 0.1 800 V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A- 2 I C = 10 m A, IB = 1 m A- 2 Typ - - - - - - 90 90 5 - - 250 - - - - - - VCE(sat) 0.05...