2SC3470 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- VBE VCE(sat) f T Cob Min 55 50 5 - - 250 - - - - Typ - - - - - - - - 230 1.8 Max - - - 0.5 0.5 1200 0.75 0.2 - 3.5 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A V V MHz p F VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC3470 is grouped by h FE as follows. See characteristic curves of 2SC1345. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 50 100 Ambient Temperature Ta...