2SC3494 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Collector output capacitance Noise figure Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- VBE VCE(sat) Cob NF PG Min 30 30 5 - - 60 - - - - 26 13 Typ - - - - - - 0.63 0.6 1.8 5.0 29 17 Max - - - 0.5 0.5 200 0.75 1.1 3.5 - - - Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A V V p F d B d B VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IE = - 1 m A, f = 1 MHz, Rg = 500 Ω VCE = 6 V, IE = - 1 m A, f = 10.7 MHz VCE = 6 V, IE = - 1 m A, f = 100 MHz Note: B 1. The 2SC3494 is grouped by h FE as follows. C 100 to 200 60 to 120 See characteristic curves of 2SC460. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W)...