2SC3793
2SC3793 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
UHF local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 15 3 50 150 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Note: Marking is “IP-”. Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE VCE(sat) Cob f T Min 20 15
- - 30
- -
- Typ
- -
- -
- - 0.7 2.9 Max
- - 1 1 200 0.5 1
- V p F GHz Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 5 m A I C = 20 m A, IB = 4 m A VCB = 10 V, IE = 0, f = 1MHz VCE = 10 V, IC = 5 m A
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 Collector Current IC (m A) 16 160 12 120 8 80 40 µA IB = 0 0 150 50 100 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 20 240 200
DC Current Transfer Ratio vs. Collector Current VCE = 10V DC Current Transfer ratio h FE 160 Collector Output Capacitance Cob (p F) 200 2.0
Collector Output Cpacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.6
0 1 2 5 10 20 Collector Current IC (m A) 50
0 1 2 5 10 20 50 Collector to Base Voltage VCB (V)
Gain Bandwidth Product vs. Collector Current 5 Gain Bandwidth Product f T (GHz) VCE = 10 V 4
0 1 2 5 10 20 Collector Current IC (m A)...
