2SC3836 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BE)EBO I CBO VBE h FE1 h FE2 Collector to emitter saturation voltage VCE(sat) Min 60 50 15 - - 800 500 - Typ - - - - - - - - Max - - - 1 0.75 2000 - 0.3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 m A VCE = 6 V, IC = 100 m A (pulse test) VCE = 6 V, IC = 1 m A I C = 300 m A, IB = 30 m A (pulse test) Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 Collector Current IC (m A) 50 Typical Output Characteristics IB = 5 µA 50 100 150 Ambient Temperature Ta (°C) 4 2 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 10,000 DC Current Transfer Ratio h FE 5,000 2,000 1,000 500 200 100 50 2 5 10 20 50 100 200 500 Collector Current IC (m A) Collector to Emitter Saturation voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) VCE = 6 V Pulse...