2SC3867 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - UHF frequency converter - Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Noise figure Note: Marking is “DI- ” Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) h FE f T Cob CG NF Min 20 11 3 - - 45 2.5 - 10 - Typ - - - - - - 3.8 0.8 14 10 Max - - - 0.5 0.7 200 - 1.5 - 14 GHz p F d B d B Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IE = 0 I C = 10 m A, IB = 5 m A VCE = 10 V, IC = 5 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz VCC = 10 V, IC = 1 m A, f = 900 MHz, f osc = 930 MHz, (- 5d Bm), fout = 30 MHz Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs.Collector Current 200 VCE = 10 V 160 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50 Collector Output Capacitance Cob (p F) Gain Bandwidth Product f T (GHz) Gain Bandwidth Product vs.Collector Current 5 VCE = 10 V 4 Collector Output Capacitance vs. Collector to Base Voltage 2.0 f = 1 MHz IE =...