2SC4046 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application High voltage amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC PC - Tj Tstg Ratings 120 120 5 0.2 8 150 - 55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 5 - 1 Typ - - - - - - - 350 3.5 Max - - - 10 800 1.0 1.0 - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 10 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade h FE V(BR)EBO I CBO h FE- VBE VCE(sat) f T Cob - - - - V V MHz p F I C = 200 m A, IB = 20 m A VCE = 10 V, IC = 50 m A VCB = 30 V, f = 1 MHz, IE = 0 1. The 2SC4046 is grouped by h FE as follows. D 250 to 500 E 400 to 800 Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 8 6 4 2 0.01 0 50 100 Case Temperature TC (°C) 150 1 1.0 Area of Safe Operation Single Pulse Ta = 25°C PW...