2SC4366
2SC4366 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
Low Frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 60 50 15 300 150 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Base to emitter voltage DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VBE h FE1 h FE2 Collector to emitter saturation voltage Note: Marking is “ZI- ”. VCE(sat) Min 60 50 15
- - 800 500
- Typ
- -
- -
- -
- - Max
- -
- 1 0.75 2000
- 0.3 V Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 m A VCE = 6 V, IC = 100 m A (pulse) VCE = 6 V, IC = 1 m A I C = 300 m A, IB = 30 m A (pulse)
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 Collector Cuttent IC (m A) Typical Output Characteristics 50 40
35 30
25 20
5 µA
IB = 0 Ta = 25°C
50 100 150 Ambient Temperature Ta (°C)
2 4 6 8 10 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10,000 DC Current Transfer Ratio h FE VCE = 6 V Pulse 3,000 Ta = 75°C 1,000 25
- 25 300 1.0 Base to Emitter Saturation Voltage VBE(sat)...
