2SC4367
2SC4367 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
High Frequency amplifier
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C (peak) PC Tj Tstg Ratings 30 20 3 100 200 600 150
- 55 to +150 Unit V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE VCE(sat) f T Cob Min 30 20 3
- 40
- 600
- Typ
- -
- -
- - 1000 1.3 Max
- -
- 1.0
- 1.0
- - V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 m A I C = 20 m A, IB = 4 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) 24
140 120 100
IB = 20 µA
50 100 150 Ambient Temperature Ta (°C)
4 8 12 16 10 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 100 50 Collector Current IC (m A) DC Current Transfer Ratio h FE VCE = 10 V Pulse 1,000 500
DC Current Transfer Ratio vs. Collector Current VCE = 10 V Pulse
Ta = 75°C 200 100 50...
