2SC4499S Datasheet | Hitachi Semiconductor

2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 3 12 S Type 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Ratings 500 400 10 0.5 1.0 0.75 10 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio h FE1 h FE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. VCE(sat) VBE(sat) t on t stg tf Min 400 10 - - 12 5 - - - - - Typ - - - - - - - - - - - Max - - 20 50 - - 1.0 1.5 1.0 2.0 1.0 V V µs µs µs Unit V V µA Test conditions I C = 0.1 A, RBE = ∞ L = 100 m H I E = 10 m A, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A- 1 VCE = 5 V, IC = 0.5 A- 1 I C = 0.25 A, IB = 0.05 A- 1 I C = 0.25 A, IB = 0.05 A- 1 I C = 0.5 A, IB1 = - IB2 = 0.1 A, VCC ≅ 150 V 2SC4499(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 10 Area of Safe...