2SC4501S Datasheet | Hitachi Semiconductor

.. 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 S Type L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC (peak) PC- Tj Tstg Ratings 30 30 7 3 4 10 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 7 - 2000 - - - - - - - Typ - - - - - - - - - 0.4 1.2 0.8 Max - - - 20 50000 1.5 2.0 2.0 3.5 - - - µs µs µs V V Unit V V V µA Test conditions IC = 0.1 m A, IE = 0 IC = 1 m A, RBE = _ IE = 0.1 m A, IC = 0 VCB = 24 V, RBE = _ VCE = 3 V, IC = 1.5 A- Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO h FE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sat) Turn on time Turn off time Storage time Note: 1. Pulse test. ton toff tstg IC = 1.5 A, IB = 3 m A- IC = 3 A, IB = 30 m A-...