2SC4592 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “XN- ”. I EBO h FE Cob f T PG NF Min 15 - - - 40 - 7.0 11.0 - Typ - - - - 120 0.8 9.5 14.0 1.2 Max - 1 1 10 250 1.5 - - 2.5 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE 200 VCE = 5 V DC Current Transfer Ratio vs. Collector Current 0 0 50 100 150 Ambient Temperature Ta (°C) 1 5 10 20 2 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 12.5 Gain Bandwidth Product f T (GHz) VCE = 5 V 1.1 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...