2SC4628
2SC4628 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Silicon NPN Planar
Application
High frequency amplifier
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 20 3 20 200 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO I EBO I CBO h FE f T Cre Min 20 20
- - 60 600
- Typ
- -
- -
- -
- Max
- - 10 1 320
- 0.9 MHz p F Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IE = 0 VCE = 10 V, IC = 2 m A VCE = 10 V, IC = 2 m A VCB = 10 V, IE = 0, emitter mon, f = 1 MHz VCB = 10 V, IC = 2 m A, f = 800 MHz
Power gain Noise figure
PG NF
- -
- - 7.0 d B d B
Maximum Collector Dissipation Curve 300 Collector Power Dissipation PC (m W) 100 DC Current Transfer Ratio h FE VCE = 10 V 80 60 40 20 0 0 50 100 Ambient Temperature Ta (°C) 150 1 2 5 10 20 Collector Current IC (m A) 50 DC Current Transfer Ratio vs. Collector Current
Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (MHz) VCE = 10 V 1600 Ceverse Transfer Capacitance Cre (p F) 2000 5
Reverse Transfer Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0
2 1.0 0.5
0.2 0.1 1 2 5 10 20 50 Collector to Base Voltage VCB (V)
0 1 2 5 10 20 Collector Current IC (m A) 50
Power Gain vs. Collector Current 20 VCB = 10 V f = 800 MHz Noise Figure NF (d B) 10 8 6 VCB = 10 V f = 800 MHz Noise Figure vs. Collector Current
16 Power Gain PG (d B)
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