2SC4629 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 600 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min 15 - - - 40 - 5.5 8.5 - Typ - - - - 120 1.15 8.0 11.5 1.2 Max - 1 1 10 250 1.85 - - 25 Unit V µA m A µA - p F GHz d B d B Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz See characteristic curve of 2SC4592 Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 900 50 100 Ambient Temperature Ta (°C) Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.45 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest...