2SC4647
2SC4647 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High break down voltage V(BR)CEO = 300 V min.
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 400 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE VCE(sat) f T Cob Min 300 300 5
- 30
- 50
- Typ
- -
- -
- -
- - Max
- -
- 1.0 200 1.5
- 4.0 V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 250 V, RBE = ∞ VCE = 20 V, IC = 20 m A I C = 20 m A, IB = 2 m A VCE = 20 V, IC = 20 m A VCE = 20 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) Typical Output Characteristics 1.0 16 14 0.8 12 10 8 0.4 0.2 6 4 2 µA IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0.4 0.8 1.2 1.6 2.0 0 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) VCE = 20 V DC Current Transfer Ratio h FE 100
DC Current Transfer Ratio vs. Collector Current Ta = 75°C 80 25
- 25 VCE = 20 V Pulse
Collector Current IC (m A)
0 1 2 5 10 20 50 Collector Current IC (m A) 100
Collector to Emitter Saturation vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 10 Gain Bandwidth Product f T (MHz) 5 2 1.0 0.5 0.2 0.1 1 2 5 10 20 50 Collector Current IC (m A) 100 IC = 10 IB Pulse Ta = 75°C 25
- 25 100 VCE = 20 V Gain Bandwidth...
