2SC4680
2SC4680 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- Low Ron and high performance for RF switch.
- Capable of high density mounting.
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 12 8 3 50 150 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Note: Marking is “XU- ”. I EBO VCE(sat) h FE Cob Min 12
- -
- - 100
- Typ
- -
- - 70 250 1.0 Max
- 10 1 10 100
- 1.5 p F Unit V µA m A µA m V Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 5 V, IC = 5 m A VCB = 5 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 500 VCE = 5 V 400
0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50
Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 2.0 Gain Bandwidth Product f T (MHz) VCE = 5 V 1.6 1.6
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.4
0 1 2 5 10 20 Collector Current IC (m A) 50
0.6 0.5
1.0 2 5 10 20 Collector to Base Voltage VCB (V)
On Resistance vs. Base Current 100 50 On Resistance Ron (Ω) Shunt Circuit Reduction LS (d B) f = 1 k Hz 0.5 VB = 0 0.4 40 Signal Reduction vs. Frequency 50 Transfer Circuit Reduction Lt (d B)
20 10 5
0.3 Lt...
