2SC4693
2SC4693 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 2.5 GHz Typ.
- Large collector power dissipation P C = 900 m W
Outline
TO-92MOD
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C (peak) PC Tj Tstg Ratings 30 20 3 300 500 900 150
- 55 to +150 Unit V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE f T Cob Min 30 20
- - 50 1.5
- Typ
- -
- -
- 2.5 4.5 Max
- - 1.0 10 200
- - GHz p F Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 m A, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 m A VCE = 5 V, IC = 50 m A VCB = 10 V, IE = 0, f = 1 MHz
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 900 Collector Current IC (m A) 200 4.0 3.5 3.0 2.5 2.0 1.5 100 1.0
0.5 m A
IB = 0 0 50 100 Ambient Temperature Ta (°C) 150 0 1.0 2.0 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current 1,000 DC Current Transfer Ratio h FE Base to Emitter Voltage VBE (V) VCE = 5 V Pulse Test 10
Base to Emitter Voltage vs. Collector Current VCE = 5 V Pulse Test
Ta = 75°C 100 25
- 25
Ta =
- 25°C 1.0 75 25
10 1 10 100 Collector Current IC (m A) 1,000
0.1 1 10 100 Collector Current IC (m A) 1,000
Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1.0 Ta = 75°C 25
- 25 Gain Bandwidth Product f T (MHz) 10,000 VCE = 5 V Gain Bandwidth Product vs. Collector Current
1,000
IC = 10 IB Pulse Test
0.01 1 10...
